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  continental device india limited data sheet page 1 of 3 csc1162 npn plastic power transistor complementary csa715 low frequency power amplifier absolute maximum ratings absolute maximum ratings absolute maximum ratings absolute maximum ratings absolute maximum ratings collector-base voltage (open emitter) v cbo max. 35 v collector-emitter voltage (open base) v ceo max. 35 v collector current i c max. 2.5 a total power dissipation up to t c = 25 c p tot max. 10 w junction temperature t j max. 150 c collector-emitter saturation voltage i c = 2a; i b = 0.2a v cesat max. 1.0 v d.c. current gain i c = 0.5a; v ce = 2v h fe min. 60 max. 320 ratings ratings ratings ratings ratings (at t a =25 c unless otherwise specified) limiting values collector-base voltage (open emitter) v cbo max. 35 v collector-emitter voltage (open base) v ceo max. 35 v csc1162 all dimensions in mm pin configuration 1. emitter 2. collector 3. base 1 3 2 is / iecqc 700000 is / iecqc 750100 is/iso 9002 lic# qsc/l- 000019.2 continental device india limited an is/iso 9002 and iecq certified manufacturer to-126 (sot-32) plastic package
continental device india limited data sheet page 2 of 3 emitter-base voltage (open collector) v ebo max. 5.0 v collector current i c max. 2.5 a collector current (peak) i c max. 3.0 a total power dissipation up to t a = 25 c p tot max. 0.75 w total power dissipation up to t c = 25 c p tot max. 10 w junction temperature t j max. 150 c storage temperature t stg 65 to +150 c characteristics characteristics characteristics characteristics characteristics t amb = 25 c unless otherwise specified collector cutoff current i e = 0; v cb = 35v i cbo max. 20 ?a breakdown voltages i c = 10 ma; i b = 0 v ceo min. 35 v i c = 1 ma; i e = 0 v cbo min. 35 v i e = 1 ma; i c = 0 v ebo min. 5 v saturation voltage i c = 2 a; i b = 0.2 a v cesat * max. 1.0 v base-emitter on voltage i c = 1.5a; v ce = 2v (pulse) v be(on) max. 1.5 v d.c. current gain i c = 0.5 a; v ce = 2 v** h fe min. 60 max. 320 i c = 1.5 a; v ce = 2 v (pulse) h fe min. 20 transition frequency i c = 0.2 a; v ce = 2 v f t typ. 180 mhz ** h ** h ** h ** h ** h fe fe fe fe fe classification: b: 60-120 c: 100-200 d: 160-320 classification: b: 60-120 c: 100-200 d: 160-320 classification: b: 60-120 c: 100-200 d: 160-320 classification: b: 60-120 c: 100-200 d: 160-320 classification: b: 60-120 c: 100-200 d: 160-320 csc1162
continental device india limited data sheet page 3 of 3 notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd is believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-579 6150 fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com


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